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| Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.22 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C Maximum Ratings -200 -200 20 30 -16 -64 -16 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W C C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Features * International standard package JEDEC TO-247 AD * Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -200 -3.0 -5.0 100 TJ = 25C TJ = 125C -25 -1 0.22 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 A V DS = VGS, ID = -250 A V GS = 20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 * * * * Applications High side switching Push-pull amplifiers DC choppers Automatic test equipment Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density (c) 2002 IXYS All rights reserved 98906 (2/02) IXTH 16P20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 2800 V GS = 0 V, VDS = -25 V, f = 1 MHz 550 240 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 26 65 25 95 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 40 0.65 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS V DS = -10 V; ID = ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -16 -64 -3 250 A A V ns Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s, VR = -50 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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